SECOND-ORDER RAMAN EFFECT IN AlP, AlAs, AND AlSb.

H. Masui; P. B. Klein; R. K. Chang; R. H. Callender; R. J. Chicotka

doi:10.1007/978-3-322-94774-1_86

SECOND-ORDER RAMAN EFFECT IN AlP, AlAs, AND AlSb.

H. Masui, P. B. Klein, R. K. Chang, R. H. Callender, R. J. Chicotka

Research output: Contribution to conference › Paper › peer-review

8 Scopus citations

Abstract

Second-order Raman spectra from acoustic and optic phonons have been observed in AlP, AlAs, and AlSb with the incident photon energy below the indirect band gap. Consequently, these spectra may be a fair representation of the two-phonon density of states. The frequency of the critical points for TA, the absolute scattering cross sections for 2TA(X), and the ratio of the integrated intensity of 2TA phonons to that of 2TO and 2LO phonons are given. Enhancement of the Raman spectrum that involves pairs of TA(L) phonons has been observed when resonance with the conduction band minima at L is achieved.

Original language	English (US)
Pages	509-513
Number of pages	5
DOIs	https://doi.org/10.1007/978-3-322-94774-1_86
State	Published - 1974
Externally published	Yes
Event	Int Conf on the Phys of Semicond, 12th, Proc - Stuttgart, W Ger Duration: Jul 15 1974 → Jul 19 1974

Other

Other	Int Conf on the Phys of Semicond, 12th, Proc
City	Stuttgart, W Ger
Period	7/15/74 → 7/19/74

ASJC Scopus subject areas

General Engineering

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10.1007/978-3-322-94774-1_86

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title = "SECOND-ORDER RAMAN EFFECT IN AlP, AlAs, AND AlSb.",

abstract = "Second-order Raman spectra from acoustic and optic phonons have been observed in AlP, AlAs, and AlSb with the incident photon energy below the indirect band gap. Consequently, these spectra may be a fair representation of the two-phonon density of states. The frequency of the critical points for TA, the absolute scattering cross sections for 2TA(X), and the ratio of the integrated intensity of 2TA phonons to that of 2TO and 2LO phonons are given. Enhancement of the Raman spectrum that involves pairs of TA(L) phonons has been observed when resonance with the conduction band minima at L is achieved.",

author = "H. Masui and Klein, {P. B.} and Chang, {R. K.} and Callender, {R. H.} and Chicotka, {R. J.}",

year = "1974",

doi = "10.1007/978-3-322-94774-1_86",

language = "English (US)",

pages = "509--513",

note = "Int Conf on the Phys of Semicond, 12th, Proc ; Conference date: 15-07-1974 Through 19-07-1974",

}

TY - CONF

T1 - SECOND-ORDER RAMAN EFFECT IN AlP, AlAs, AND AlSb.

AU - Masui, H.

AU - Klein, P. B.

AU - Chang, R. K.

AU - Callender, R. H.

AU - Chicotka, R. J.

PY - 1974

Y1 - 1974

N2 - Second-order Raman spectra from acoustic and optic phonons have been observed in AlP, AlAs, and AlSb with the incident photon energy below the indirect band gap. Consequently, these spectra may be a fair representation of the two-phonon density of states. The frequency of the critical points for TA, the absolute scattering cross sections for 2TA(X), and the ratio of the integrated intensity of 2TA phonons to that of 2TO and 2LO phonons are given. Enhancement of the Raman spectrum that involves pairs of TA(L) phonons has been observed when resonance with the conduction band minima at L is achieved.

AB - Second-order Raman spectra from acoustic and optic phonons have been observed in AlP, AlAs, and AlSb with the incident photon energy below the indirect band gap. Consequently, these spectra may be a fair representation of the two-phonon density of states. The frequency of the critical points for TA, the absolute scattering cross sections for 2TA(X), and the ratio of the integrated intensity of 2TA phonons to that of 2TO and 2LO phonons are given. Enhancement of the Raman spectrum that involves pairs of TA(L) phonons has been observed when resonance with the conduction band minima at L is achieved.

UR - http://www.scopus.com/inward/record.url?scp=0016214506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016214506&partnerID=8YFLogxK

U2 - 10.1007/978-3-322-94774-1_86

DO - 10.1007/978-3-322-94774-1_86

M3 - Paper

AN - SCOPUS:0016214506

SP - 509

EP - 513

T2 - Int Conf on the Phys of Semicond, 12th, Proc

Y2 - 15 July 1974 through 19 July 1974

ER -

SECOND-ORDER RAMAN EFFECT IN AlP, AlAs, AND AlSb.

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